WORLDTECHHynix and Micron reportedly to build NVHBM base dies on TSMC 3nm
According to the Seoul Economic Daily, Hynix and Micron intend to source the base dies for their custom NVHBM memory from TSMC's 3nm node. The account reached readers through a report by Electronics Weekly, and no other outlet is cited for it.
What the Seoul report describes
The Seoul Economic Daily says the two memory makers plan to have base dies for their custom high-bandwidth memory produced on TSMC's 3nm process. NVHBM is that custom product, and HBM in general is memory stacked beside a processor so it can be fed data more quickly.
Electronics Weekly carried the account, but the text it published is cut off, so the arrangement's remaining details cannot be checked from the material available.
The companies involved
TSMC is a semiconductor company based in Hsinchu Science Park, founded in 1987. Micron, based in Boise, was founded in 1978, and its products include computer memories.
Open questions
- Have Hynix or Micron confirmed the arrangement with TSMC?
- What volumes or timing apply to the 3nm base dies for NVHBM?