WORLDTECHUC Berkeley, Samsung and Intel Publish Nanoelectromechanical Gain-Cell eDRAM Research
Researchers from UC Berkeley, Samsung Electronics and Intel have published a paper on a nanoelectromechanically gated gain-cell embedded DRAM, according to a report by Semiconductor Engineering. The work appears in the IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.
Publication details
The paper, titled Nanoelectromechanically Gated Gain Cell eDRAM, was published by researchers affiliated with UC Berkeley, Samsung Electronics and Intel. It appears in the IEEE Journal on Exploratory Solid-State Computational Devices and Circuits in 2026, on pages 223 to 230.
Semiconductor Engineering reported the publication under the headline on which this summary is based. The report is the only source the facts provide for the work.
The companies involved
Intel is a semiconductor and electrical company headquartered in Santa Clara and founded in 1968. Samsung is an electronics company based in Suwon and founded in 1969. The facts do not describe the specific role each organisation played in the research.
Open questions
- What performance or efficiency gains the nanoelectromechanical switches achieve over conventional embedded DRAM?
- What was the division of work between UC Berkeley, Samsung and Intel?