Carbon-Dot Interface Enables Ultrathin High-κ Dielectrics on 2D Semiconductors (UIUC, NETL, Argonne, Monash)

What happened

Researchers at the University of Illinois Urbana-Champaign, National Energy Technology Laboratory, Argonne National Laboratory, and Monash University published a technical paper titled “Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer.” Abstract Excerpt: “This atomically thin assembly forms a van der Waals interfacial layer that enables deposition of ultrathin high-κ oxides.”