Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)

What happened

Researchers at Huazhong University of Science and Technology, Hong Kong Polytechnic University, University of California, Santa Barbara, and National University of Singapore published a technical paper titled “Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers.” Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers. https://doi.org/10.1038/s41467-026-78157-w The post Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS) appeared first on Semiconductor Engineering .